 |
 |
||||
 |
|||||
 |
|||||
 |
|||||
 |
 |
 |
 |
 |
 |
 |
|||||
The laboratory is equipped with three solid source MBE chambers for the growth of III-V semiconductor materials. All chambers are equipped for reflection high energy electron diffraction (RHEED) characterization and are fully computer controlled. |
|
 |
DCA MBE (Chamber C) One of these chambers (chamber C) is a DCA Instruments 450 MBE machine equipped with ellipsometer ports and a wobble-free substrate manipulator. It has been used to develop in-situ monitoring tools which allow feedback control of thickness and composition in real time. The system is also equipped with additional optical viewports that are used for feedback control of the substrate temperature with optical band edge thermometry. It now fabricates complete devices under feedback control using spectroscopic ellipsometry. |
 |
VG V80H (Chamber A and B) The other two chambers (chamber A and B) are VG V80H twin-chamber MBE systems. Both the machines are dedicated to the growth of GaAs, InP, GaSb, and InAs based optoelectronic devices; including laser diodes, light emitting diodes, optical refrigeration devices, photodetectors, and photovaltic devices; with a wavelength range from 600 nm to 3 mircrons. |
|
Temperature and power dependent photoluminescence The photoluminescence setup is currently equipped with a 50 mW HeNe Laser and a 100 mW semiconductor laser as the pump light source. A spectrometer equipped with a photo multiplier tube (PMT) and Ge detector is capable of performing temperature photoluminescence measurements and other optical spectral measurements for wavelengths from 400 nm to 1700 nm and temperature range from 8 K to 320 K. |
 |
Transmittance and reflectance measurement A Fourier Transform Infrared Spectrometer (FTIR) equipped with an InAs detector , an InSb detector, and an MTG detectro is capable of measure transmittance and reflectance for wavelength from 1 mircron to 25 microns. |
 |
Time resolved luminescence A time resolved luminescence spectroscopy system equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors to cover wavelength range from 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano second resolution. |
 |
Material Characterization The Center of Solid State Science (CSSS) here at ASU can perform a lot of materials characterization, including transmission electron microscopy (TEM), scanning electron microscopy (SEM) Secondary Ion Mass Spectrometry (SIMS), Atomic Force Microscopy (AFM), and X-ray measurements. |
 |
Processing/Clean Room
The semiconductor processing is carried out in a 4,000 square foot Class-100 cleanroom in the Center for Solid State Electronics Research (CSSER). |
 |
Low temperature probe station A TTP4 cryogenic manipulated-proble station is used for non-destructive electrical testing of devices on full and partial wafers up to 2 inches in deameter. Cryogenic operation is based on a continuous-tranfer cryogenic refrigerator specifically for the TTP. A custom designed window and double-fiber optical probe are equipped and the temperature can be varied from 4.2 K to 300 K. |
 |
Integration sphere Integrating sphere collects radiation from a source completely external to the optical device (such as a laser or a light emitting diode), usually for the purpose of flux measurement. Radiation introduced into an integrating sphere is dispersed very uniformly at the sphere walls. The resulting integrated radiation level is directly proportional to the initial radiation level and can be directly measured by a detector. |
 |
Time resolved electroluminescence A time resolved luminescence spectroscopy system equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors to cover wavelength range from 0.3 microns to 12 microns. The system is capable of measuring time-resolved electroluminescence from 10 K to 400 K with nano second resolution. This system is designed to be seamless integrated with our low temperature probe station. |
